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Domain structure of epitaxial SrRuO3 thin films on
miscut (001) SrTiO3 substrates
J. C. Jiang, W. Tian, and X. Q. Pana)
Department of Materials Science & Engineering, The University
of Michigan, Ann Arbor, Michigan 48109
Q. Gan and C. B. Eom
Department of Mechanical Engineering and Materials Science, Duke University,
Durham, North Carolina 27708
Received: 29 January 1998; accepted: 27 March 1998
The microstructure of epitaxial
SrRuO3 thin films grown on vicinal (001) SrTiO3 substrates
with miscut angle of 1.9° and miscut direction of 12°
away from [100] direction was studied using transmission electron
microscopy (TEM). Cross-section as well as plan-view TEM studies
revealed that these films are single domain with the in-plane
epitaxial orientation relationship of SrRuO3[001]//SrTiO3[010]
and SrRuO3[
10]//SrTiO3[100].
This result is in contrast to the previous studies of the SrRuO3
thin films grown on exactly (001) SrTiO3, which are
composed of two types of [110] domains with nearly the same
volume fraction. The occurrence of these different domain structures
is attributed to the step-flow growth of the film on the substrate
surface due to the miscut. © 1998 American Institute
of Physics. [S0003-6951(98)00523-3]
Contents
SrRuO3 is a conductive
magnetic oxide, which is paramagnetic at room temperature1
and ferromagnetic below 160 K.2
Recently, epitaxial thin films of SrRuO3 have attracted
considerable attention because of its important electrical and
magnetic properties, such as high-perpendicular remnant magnetization and
large magneto-optical constant3
which make this material very useful for making various electronic
and optic devices. Furthermore, (Pb,Zr)TiO3 ferroelectric and
BaSrTiO3 high dielectric constant capacitors with SrRuO3
thin film electrodes exhibit superior fatigue and leakage characteristics.4,5
Epitaxial SrRuO3 thin films have been successfully
grown on different substrates by different methods, such as
90° off-axis sputtering,6
molecular beam epitaxy,7
and pulsed laser ablation.8
SrRuO3 thin films grown on
(001) SrTiO3 and (001) LaAlO3 substrates
have different magnetic properties. For example, thin films
formed on (001) SrTiO3 and (001) LaAlO3 show different
coercive behavior at low temperature,3
and thin films grown on miscut (001) SrTiO3 substrate
show a strong anisotropic magnetoresistance, whereas those grown
on (001) LaAlO3 substrate show identical magnetoresistance behavior
in two orthogonal directions.9
It is well known that the properties of perovskite oxide devices
depend strongly on the surface morphology and the microstructure
of the thin films. Therefore, a major challenge in heteroepitaxial
perovskite devices is to explore the growth mechanisms in order
to produce high quality epitaxial thin films. The deposition
conditions and the choice of substrates play a key role in determining
the microstructure and the properties of the thin films, thus,
making it possible to deliberately control the surface morphology,
domain structure, and properties of thin films.
SrRuO3 has a GdFeO3
type pseudo-cubic perovskite structure.10
At room temperature, it is an orthorhombic phase with the space
group of Pbnm (No. 62) and lattice parameters a = 5.5670 Å,
b = 5.5304 Å, and c = 7.8446 Å.11
All the planes and directions of SrRuO3 referred to
in this work are based on the orthorhombic unit cell. SrTiO3
has a cubic perovskite structure with the space group of Pm
m
and lattice constant of a = 3.905 Å.12
When SrRuO3 is deposited on (001) SrTiO3
substrate, the film can grow epitaxially with its (001), (110),
or (1
0)
planes parallel to the SrTiO3 (001) surface. Therefore,
there are six possible domain structures based on the possible
interfacial structural models of SrRuO3/SrTiO3
as shown schematically in Fig. 1.
For clarity, the pseudo-cubic perovskite unit cell of SrRuO3
is shown in the figure with orthorhombic indexing of the unit
cell directions. The SrRuO3 film can grow with its
(110) plane parallel to the SrTiO3 (001) surface
with an in-plane orientation relationship with respect to the
SrTiO3 substrate of either SrRuO3[001]//SrTiO3[010]
and SrRuO3[
10]//SrTiO3[100]
(mode X), or SrRuO3[001]//SrTiO3[100]
and SrRuO3[1
0]//SrTiO3[010]
(mode Y). The SrRuO3 film can also grow with
its (1
0)
plane parallel to the (001) surface of SrTiO3 with
an in-plane orientation relationship of either SrRuO3[001]//SrTiO3[010]
and SrRuO3[110]//SrTiO3[100] (mode X
),
or SrRuO3[001]//SrTiO3[100] and SrRuO3[![[overaccent (overbar) [above] 1]](2963_1m0.gif)
0]//SrTiO3[010]
(mode Y
).
It is also possible that the SrRuO3 film grows along
its [001] axis normal to the (001) surface of SrTiO3,
with an in-plane orientation relationship of either SrRuO3[100]//SrTiO3[110]
and SrRuO3[010]//SrTiO3[1
0]
(mode Z), or SrRuO3 [100]//SrTiO3 [
10]
and SrRuO3 [010]//SrTiO3 [110] (mode Z
).
If the above six growth modes are simultaneously formed during
the process of film growth, then the six domain structures will
coexist in one thin film. Among the six types of domains in
the film, X(X
)-,
Y(Y
)-,
and Z(Z
)-type
domains can be distinguished by means of conventional transmission
electron microscopy (TEM), while the difference between the
X (Y or Z) and X
(Y
or Z
)
is not distinguishable by the same techniques due to the pseudo-cubic
characteristic of the SrRuO3 structure. In the present
work, we only classify the domains as three types (X,
Y, and Z).
Figure
1.
In order to investigate the effect
of substrate miscut on domain structures and properties, SrRuO3
thin films were grown on (001) SrTiO3 substrates
with different miscut angles and directions and studied by a
variety of analytical methods, such as x-ray diffraction and
atomic force microscopy.13,14
In our previous work, we reported the microstructure of SrRuO3
thin films on exact (001) SrTiO3 substrates.15
It was found that SrRuO3 thin films grown on exact
(001) SrTiO3 consist of both the X- and the
Y-type domains with nearly the same volume fraction.
In this letter, we report the TEM studies of the SrRuO3
thin films on a vicinal (001) SrTiO3 substrates.
SrRuO3 thin films on a vicinal
(001) SrTiO3 substrate, with a miscut angle (
)
of 1.9° and miscut direction (
)
of 12° away from the in-plane [100] direction, were deposited
by 90° off-axis sputtering. Here
is defined as the angle between the surface normal and the crystallographic
[001] direction of SrTiO3, while
is defined as the angle between the projection of the surface
normal onto the (001) plane and the in-plane [100] direction.13
The cross-sectional slices for
TEM studies were obtained by cutting the SrRuO3/SrTiO3
heterostructural samples along the [100] direction of SrTiO3
and then gluing the cut slides face-to-face by joining the SrRuO3
surfaces. Plan-view and cross-section TEM specimens were prepared
by mechanical grinding, polishing, and dimpling, followed by
Ar-ion milling at 5 kV. Electron diffraction patterns and dark-field
images were recorded in a Philips CM12 electron microscope operated
at 120 kV in the EMAL at the University of Michigan.
Figure 2(a)
is a dark-field image of a cross-sectional sample, formed by
the (111) reflection of a SrRuO3 film, viewed along
the [010] direction of SrTiO3. Similar to the previous
TEM observations of the SrRuO3 thin film grown on
exact (001) SrTiO3 substrate,15
the film studied in this work has a smooth surface and a
sharp interface between the film and the substrate and maintains
a uniform thickness of about 100 nm over the entire specimen.
The occurrence of bright and dark parts in the image indicates
that the film consists of two types of domains. Figures 2(b)
and 2(c) are selected area electron diffraction
(SAED) patterns taken from the two SrRuO3 domains of different
types [corresponding to the regions marked A and B in Fig.
2(a)], for which the electron beam direction is parallel
to the [010] axis of SrTiO3. Figure 2(b)
is identified to be the [1
0]
zone electron diffraction pattern of SrRuO3. According
to this diffraction pattern, the (110) plane of the film is
parallel to the (001) surface of SrTiO3, while the
[001] direction of the SrRuO3 film lies in the film
plane, indicating a Y-type domain structure in this region.
In contrast, Fig. 2(c) is the [001] zone electron
diffraction pattern of SrRuO3, in which the (110)
plane is parallel to the SrTiO3 (001) surface, while
the [1
0]
direction lies in the film plane, indicating an X-type
domain structure. The TEM studies of cross-sectional specimens
cutting from different region of the same film revealed that
the film grown on the vicinal (001) SrTiO3 substrates
mainly consists of the X-type domain and that the small
Y-type domains only occasionally be observed.
Figure
2.
The microstructure and the size distribution
of X and Y types of domains in the film were investigated
in plan-view samples of the same film. Micrographs in Figs. 3
and 4
were taken from different areas of the same plan-view specimen.
Figure 3(a) is a SAED pattern showing the [110]
zone electron diffraction patterns of the SrRuO3 film.
Figure 3(b) is a dark-field image formed using
a weak reflection marked by ``X'' in Fig. 3(a).
Comparing the diffraction pattern in Fig. 3(a)
with the electron diffraction pattern of the SrTiO3 substrate,
it has been found that the specimen area in Fig. 3(b)
has a crystallographic orientation of the X-type domain structure
shown in Fig. 1. From detailed TEM studies of plane-view
specimens prepared from different parts of the same SrRuO3
film, it can be concluded that the X-type domains in
the SrRuO3 film form a continuous matrix with a small
amount of islands of either Y- or Z-type domains. This
is shown in Fig. 4. Figure 4(a)
shows a SAED pattern taken from the same plan-view specimen
as in Fig. 3. It is a superposition of SAED
patterns generated from domains of all the three types shown
in Fig. 1. The weak reflection marked by ``X'',
``Y'', and ``Z'' in Fig. 4(a) belong to domains
of X, Y, and Z type, respectively. Figures
4(b), 4(c), and 4(d)
are dark-field images formed by these three weak reflections,
respectively. The white contrast in Fig. 4(b)
represent X-type domains, while the black contrast represent
the mixture of Y- and Z-type domains, which are bright
in Figs. 4(c) and 4(d), respectively.
The fine dark lines in Figs. 3(b) and 4(b)
are antiphase boundaries of SrRuO3. It should be
pointed out that the Y- and Z-type domains were
only occasionally observed. However, the previous x-ray diffraction
studies using a four-circle diffractometer13
showed that the as-grown film on the vicinal (001) SrTiO3
substrate consists of a single domain (the X-type domain)
structure. The reason for this inconsistency is so far unclear,
based on the present studies.
Figure
3.
Figure
4.
The present TEM investigations of the
SrRuO3 thin films deposited on the vicinal (001)
SrTiO3 show that the film consists of a matrix domain
of the X-type with some small islands of the other-type
domains. The previous TEM investigations15
showed that the SrRuO3 thin films grown on exact
(001) SrTiO3 substrate are composed of both X-
and Y-type domains with nearly the same volume fraction.
The volume fraction of X-, Y-, and Z-type
domains presented in the SrRuO3 films grown on exact
and vicinal (001) SrTiO3 substrates is summarized in Table I,
based on the TEM observations. The different domain structures
observed in the SrRuO3 thin films grown on the exact
and vicinal (001) SrTiO3 substrates reveal that the surface
morphology of the substrate has a strong effect on the SrRuO3
thin film growth. This effect may be ascribed to the influence
of the periodic step-terrace structure of the miscut substrate
surface on the growth mechanism of the film.13
However, the understanding of the underlying mechanisms, such
as preferential formation of a particular kind of domain structure
needs further detailed studies on the microstructure of the
films grown on substrates with different miscut angles and directions,
and especially the study of films grown at different deposition
conditions such as growth temperature, growth rate, cooling
rate, and oxygen pressure.
In conclusion, the SrRuO3
thin films deposited by 90° off-axis sputtering on the vicinal
(001) SrTiO3 show a different domain structure compared
to those grown on exact (001) SrTiO3 substrate. The film
on miscut (001) SrTiO3 substrate consists of some small
regions of Y- and Z-type domains embedded in a
matrix domain which has the X-type domain orientation.
These studies reveal that a miscut of the (001) SrTiO3
substrate along the [100] direction has a strong influence on
the microstructure of the SrRuO3 film. Further studies
of domain configurations and interfacial atomistic structures
of thin films grown at different conditions are necessary to
understand the underlying mechanisms of the effect.
This work was supported by
the College of Engineering, the University of Michigan, Ann
Arbor, Michigan.
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FIGURES
Full
figure (8 kB)
Fig. 1. Schematic diagram showing six possible growth modes
of SrRuO3 thin film on the (001) substrate of SrTiO3.
Note that while the pseudo-cubic perovskite unit cell of SrRuO3
is drawn, the cell directions are indexed based on the orthorhombic
unit cell. First citation in article
Full
figure (12 kB)
Fig. 2. (a) Dark-field image formed by the (111) reflection
of SrRuO3 showing two types of domain structures
(bright and dark). (b) and (c) SAED patterns from the bright
and dark regions showing the [1
0]
and [001] zone of SrRuO3, respectively. First
citation in article
Full
figure (12 kB)
Fig. 3. (a) SAED pattern from a plan-view specimen showing
[110] zone of SrRuO3. (b) Dark-field image using weak
reflection marked by ``X'' in (a), showing one purely X-type
domain. First citation in article
Full
figure (14 kB)
Fig. 4. (a) SAED pattern from the same plan-view specimen as that
shown in Fig. 3. (b), (c), and (d) dark-field images
using X, Y, and Z reflections, respectively, showing small amount
of Y- and Z-type domains existing as islands within
the dominant X-type domain. First
citation in article
TABLES
| Table I. The volume
fraction of X-, Y-, and Z-type domains in the
SrRuO3 films grown on exact and vicinal (001) SrTiO3
substrates. |
Substrate
orientation |
X-domain
(vol. %) |
Y-domain
(vol. %) |
Z-domain
(vol. %) |
| Exact (001) |
~ 50% |
~ 50% |
0 |
| Vicinal (001) |
> 95% |
< 5% |
1% |
First citation in article
FOOTNOTES
aElectronic mail: panx@engin.umich.edu
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