Rachel S. Goldman

Professor

rsgold@umich.edu

2094 H.H. Dow Building

T: (734) 647-6821

Bio

Projects

Publications

Research Facilities

Group


Publications

  1. RAMMOHAN, K, TANG, Y, RICH, D, GOLDMAN, R, WIEDER, H, and KAVANAGH, K (1995). RELAXATION-INDUCED POLARIZED LUMINESCENCE FROM INXGA1-XAS FILMS GROWN ON GAAS(001)PHYSICAL REVIEW B, 51(8):5033–5037.

  2. RICH, D, RAMMOHAN, K, TANG, Y, LIN, H, GOLDMAN, R, WIEDER, H, and KAVANAGH, K (1995). INFLUENCE OF GAAS(001) SUBSTRATE MISORIENTATION TOWARDS (111) ON THE OPTICAL-PROPERTIES OF INXGA1-XAS/GAASJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 13(4):1766–1772.

  3. Ring, K, Shapiro, A, Deng, F, Goldman, R, Spada, F, Hellman, F, Cheeks, T, and Kavanagh, K (1995). Structural and magnetic characterization of Bi-substituted garnet on Si and GaAsMAGNETIC ULTRATHIN FILMS, MULTILAYERS AND SURFACES, 384:41–46.

  4. WIEDER, H, GOLDMAN, R, CHEN, J, and YOUNG, A (1995). GATE-CONTROLLED MODULATION OF CHARGE-TRANSPORT IN LONG-CHANNEL, DELTA-DOPED, HETEROJUNCTION HALL-BAR STRUCTURESJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 13(4):1853–1858.

  5. GOLDMAN, R, CHANG, J, and KAVANAGH, K (1994). CONTROL OF SURFACE-MORPHOLOGY AND STRAIN RELAXATION OF INGAAS GROWN ON GAAS USING A STEP-GRADED BUFFEREPITAXIAL GROWTH PROCESSES, 2140:179–188.

  6. GOLDMAN, R, RAMMOHAN, K, RAISANEN, A, GOORSKY, M, BRILLSON, L, RICH, D, WIEDER, H, and KAVANAGH, K (1994). ANISOTROPIC STRUCTURAL AND ELECTRONIC-PROPERTIES OF INGAAS/GAAS HETEROJUNCTIONSCOMPOUND SEMICONDUCTOR EPITAXY, 340:349–354.

  7. GOLDMAN, R, WIEDER, H, KAVANAGH, K, RAMMOHAN, K, and RICH, D (1994). ANISOTROPIC STRUCTURAL, ELECTRONIC, AND OPTICAL-PROPERTIES OF INGAAS GROWN BY MOLECULAR-BEAM EPITAXY ON MISORIENTED SUBSTRATESAPPLIED PHYSICS LETTERS, 65(11):1424–1426.

  8. GRIMSDITCH, M, KUMAR, S, and GOLDMAN, R (1994). A BRILLOUIN-SCATTERING INVESTIGATION OF NIOJOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 129(2-3):327–333.

  9. KAVANAGH, K, GOLDMAN, R, and CHANG, J (1994). STRAIN RELAXATION IN COMPOSITIONALLY GRADED INGAAS/GAAS HETEROSTRUCTURESSCANNING MICROSCOPY, 8(4):905–912.

  10. RAISANEN, A, BRILLSON, L, GOLDMAN, R, KAVANAGH, K, and WIEDER, H (1994). DISLOCATION-INDUCED DEEP-LEVEL STATES IN IN0.08GA0.92AS/GAAS HETEROSTRUCTURESJOURNAL OF ELECTRONIC MATERIALS, 23(9):929–933.

  11. RAISANEN, A, BRILLSON, L, GOLDMAN, R, KAVANAGH, K, and WIEDER, H (1994). OPTICAL-DETECTION OF MISFIT DISLOCATION-INDUCED DEEP LEVELS AT INGAAS/GAAS HETEROJUNCTIONSAPPLIED PHYSICS LETTERS, 64(26):3572–3574.

  12. RAISANEN, A, BRILLSON, L, GOLDMAN, R, KAVANAGH, K, and WIEDER, H (1994). STRAIN RELAXATION INDUCED DEEP LEVELS IN IN1-XGAXAS THIN-FILMSJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 12(4):1050–1053.

  13. GRIER, D, ALLEN, K, GOLDMAN, R, SANDER, L, and CLARKE, R (1990). SUPERLATTICES AND LONG-RANGE ORDER IN ELECTRODEPOSITED DENDRITESPHYSICAL REVIEW LETTERS, 64(18):2152–2155.