Relationship between surface morphology and strain relaxation during growth of InGaAs strained layers

Rachel S. Goldman

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rsgold@umich.edu

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C Lavoie, T Pinnington, E Nodwell, T Tiedje, RS Goldman, KL Kavanagh, and JL Hutter (1995)

APPLIED PHYSICS LETTERS, 67(25):3744–3746.

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