Modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterostructures grown on GaAs substrates using step-graded InxGa1-xAs buffers

Rachel S. Goldman

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rsgold@umich.edu

2094 H.H. Dow Building

T: (734) 647-6821

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RS Goldman, KL Kavanagh, and HH Wieder (1996)

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 14(4):3035–3039.

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