Effects of substrate misorientation direction on strain relaxation at InGaAs/GaAs(001) interfaces

Rachel S. Goldman

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rsgold@umich.edu

2094 H.H. Dow Building

T: (734) 647-6821

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RS Goldman, HH Wieder, and KL Kavanagh (1995)

STRAINED LAYER EPITAXY-MATERIALS, PROCESSING, AND DEVICE APPLICATIONS, 379:21–26.

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