Materials Science & Engineering

Rachel S. Goldman

Professor

rsgold@umich.edu

2094 H.H. Dow Building

T: (734) 647-6821

Bio

Projects

Publications

Research Facilities

Group


Publications

  1. Kang, M, Jeon, S, Jen, T, Lee, J, Sih, V, and Goldman, R (2017). Formation of embedded plasmonic Ga nanoparticle arrays and their influence on GaAs photoluminescence,  JOURNAL OF APPLIED PHYSICS, 122(3):033102.

  2. Occena, J, Jen, T, Rizzi, E, Johnson, T, Horwath, J, Wang, Y, and Goldman, R (2017). Bi-enhanced N incorporation in GaAsNBi alloys,  APPLIED PHYSICS LETTERS, 110(24):242102.

  3. Field, R, Occena, J, Jen, T, Del Gaudio, D, Yarlagadda, B, Kurdak, C, and Goldman, R (2016). Influence of surface reconstruction on dopant incorporation and transport properties of GaAs(Bi) alloys,  APPLIED PHYSICS LETTERS, 109(25):252105.

  4. Liu, W, Chi, H, Walrath, J, Chang, A, Stoica, V, Endicott, L, Tang, X, Goldman, R, and Uher, C (2016). Origins of enhanced thermoelectric power factor in topologically insulating Bi0.64Sb1.36Te3 thin films,  APPLIED PHYSICS LETTERS, 108(4):043902.

  5. Mintairov, A, He, Y, Merz, J, Jin, Y, Goldman, R, Kudrawiec, R, Misiewicz, J, Akimov, I, Yakovlev, D, and Bayer, M (2016). Quasi-ordering of composition fluctuations and their interaction with lattice imperfections in an optical spectra of dilute nitride alloys,  SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 31(9):095012.

  6. Canniff, J, Jeon, S, Huang, S, and Goldman, R (2015). Formation and coarsening of near-surface Ga nanoparticles on SiNx,  APPLIED PHYSICS LETTERS, 106(24):243102.

  7. Jen, T, Vardar, G, Wang, Y, and Goldman, R (2015). Identifying the dominant interstitial complex in dilute GaAsN alloys,  APPLIED PHYSICS LETTERS, 107(22):221904.

  8. Luengo-Kovac, M, Macmahon, M, Huang, S, Goldman, R, and Sih, V (2015). g-factor modification in a bulk InGaAs epilayer by an in-plane electric field,  PHYSICAL REVIEW B, 91(20):201110.

  9. Walrath, J, Lin, Y, Huang, S, and Goldman, R (2015). Profiling the local carrier concentration across a semiconductor quantum dot,  APPLIED PHYSICS LETTERS, 106(19):192101.

  10. Warren, M, Canniff, J, Chi, H, Naab, F, Stoica, V, Clarke, R, Uher, C, and Goldman, R (2015). Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs,  JOURNAL OF APPLIED PHYSICS, 117(6):065101.

  11. Abere, M, Chen, C, Rittman, D, Kang, M, Goldman, R, Phillips, J, Torralva, B, and Yalisove, S (2014). Nanodot formation induced by femtosecond laser irradiation,  APPLIED PHYSICS LETTERS, 105(16):163103.

  12. Chang, A, Zech, E, Kim, T, Lin, Y, Mawst, L, and Goldman, R (2014). Influence of Sb incorporation on InGaAs(Sb)N/GaAs band alignment,  APPLIED PHYSICS LETTERS, 105(14):142105.

  13. Fahrenkrug, E, Gu, J, Jeon, S, Veneman, P, Goldman, R, and Maldonado, S (2014). Room-Temperature Epitaxial Electrodeposition of Single-Crystalline Germanium Nanowires at the Wafer Scale from an Aqueous Solution,  NANO LETTERS, 14(2):847–852.

  14. Huang, S, Kim, S, Pan, X, and Goldman, R (2014). Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots,  APPLIED PHYSICS LETTERS, 105(3):032107.

  15. Kang, M, Beskin, I, Al-Heji, A, Shende, O, Huang, S, Jeon, S, and Goldman, R (2014). Evolution of ion-induced nanoparticle arrays on GaAs surfaces,  APPLIED PHYSICS LETTERS, 104(18):182102.

  16. Kang, M, Wu, J, Ye, W, Jiang, Y, Robb, E, Chen, C, and Goldman, R (2014). Formation and evolution of ripples on ion-irradiated semiconductor surfaces,  APPLIED PHYSICS LETTERS, 104(5):052103.

  17. Kudrawiec, R, Sitarek, P, Gladysiewicz, M, Misiewicz, J, He, Y, Jin, Y, Vardar, G, Mintarov, A, Merz, J, Goldman, R, Yu, K, and Walukiewicz, W (2014). Surface photovoltage and modulation spectroscopy of E- and E+ transitions in GaNAs layers,  THIN SOLID FILMS, 567:101–104.

  18. Li, Y, Stoica, V, Sun, K, Liu, W, Endicott, L, Walrath, J, Chang, A, Lin, Y, Pipe, K, Goldman, R, Uher, C, and Clarke, R (2014). Ordered horizontal Sb2Te3 nanowires induced by femtosecond lasers,  APPLIED PHYSICS LETTERS, 105(20):201904.

  19. Canniff, J, Wood, A, and Goldman, R (2013). Formation mechanisms of embedded nanocrystals in SiNx,  APPLIED PHYSICS LETTERS, 102(24):243111.

  20. Feldberg, N, Aldous, J, Linhart, W, Phillips, L, Durose, K, Stampe, P, Kennedy, R, Scanlon, D, Vardar, G, Field, R, Jen, T, Goldman, R, Veal, T, and Durbin, S (2013). Growth, disorder, and physical properties of ZnSnN2,  APPLIED PHYSICS LETTERS, 103(4):042109.

  21. Field, R, Jin, Y, Cheng, H, Dannecker, T, Jock, R, Wang, Y, Kurdak, C, and Goldman, R (2013). Influence of N incorporation on persistent photoconductivity in GaAsN alloys,  PHYSICAL REVIEW B, 87(15):155303.

  22. Huang, S, Kim, S, Levy, R, Pan, X, and Goldman, R (2013). Mechanisms of InAs/GaAs quantum dot formation during annealing of In islands,  APPLIED PHYSICS LETTERS, 103(13):132104.

  23. Kang, M, Al-Heji, A, Lee, J, Saucer, T, Jeon, S, Wu, J, Zhao, L, Katzenstein, A, Sofferman, D, Sih, V, and Goldman, R (2013). Ga nanoparticle-enhanced photoluminescence of GaAs,  APPLIED PHYSICS LETTERS, 103(10):101903.

  24. Kang, M, Wu, J, Sofferman, D, Beskin, I, Chen, H, Thornton, K, and Goldman, R (2013). Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces,  APPLIED PHYSICS LETTERS, 103(7):072115.

  25. Pursley, B, Luengo-Kovac, M, Vardar, G, Goldman, R, and Sih, V (2013). Spin lifetime measurements in GaAsBi thin films,  APPLIED PHYSICS LETTERS, 102(2):022420.

  26. Vardar, G, Paleg, S, Warren, M, Kang, M, Jeon, S, and Goldman, R (2013). Mechanisms of droplet formation and Bi incorporation during molecular beam epitaxy of GaAsBi,  APPLIED PHYSICS LETTERS, 102(4):042106.

  27. Walrath, J, Lin, Y, Pipe, K, and Goldman, R (2013). Quantifying the local Seebeck coefficient with scanning thermoelectric microscopy,  APPLIED PHYSICS LETTERS, 103(21):212101.

  28. Warren, M, Canniff, J, Chi, H, Morag, E, Naab, F, Stoica, V, Clarke, R, Uher, C, and Goldman, R (2013). Influence of embedded indium nanocrystals on GaAs thermoelectric properties,  JOURNAL OF APPLIED PHYSICS, 114(4):043704.

  29. Zech, E, Chang, A, Martin, A, Canniff, J, Lin, Y, Millunchick, J, and Goldman, R (2013). Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets,  APPLIED PHYSICS LETTERS, 103(8):082107.

  30. Dasika, V and Goldman, R (2012). STM OF SELF ASSEMBLED III-V NANOSTRUCTURES,  HANDBOOK OF INSTRUMENTATION AND TECHNIQUES FOR SEMICONDUCTOR NANOSTRUCTURE CHARACTERIZATION, VOLS 1 AND 2, 1-2:369–406.

  31. Kang, M, Saucer, T, Warren, M, Wu, J, Sun, H, Sih, V, and Goldman, R (2012). Surface plasmon resonances of Ga nanoparticle arrays,  APPLIED PHYSICS LETTERS, 101(8):081905.

  32. Kang, M, Wu, J, Huang, S, Warren, M, Jiang, Y, Robb, E, and Goldman, R (2012). Universal mechanism for ion-induced nanostructure formation on III-V compound semiconductor surfaces,  APPLIED PHYSICS LETTERS, 101(8):082101.

  33. Warren, M, Wood, A, Canniff, J, Naab, F, Uher, C, and Goldman, R (2012). Evolution of structural and thermoelectric properties of indium-ion-implanted epitaxial GaAs,  APPLIED PHYSICS LETTERS, 100(10):102101.

  34. Wood, A, Collino, R, Wang, P, Wang, Y, and Goldman, R (2012). Formation and transformation of embedded GaN nanocrystals,  APPLIED PHYSICS LETTERS, 100(20):203113.

  35. Wu, J and Goldman, R (2012). Mechanisms of nanorod growth on focused-ion-beam-irradiated semiconductor surfaces: Role of redeposition,  APPLIED PHYSICS LETTERS, 100(5):053103.

  36. Collino, R, Wood, A, Estrada, N, Dick, B, Ro, H, Soles, C, Wang, Y, Thouless, M, and Goldman, R (2011). Formation and transfer of GaAsN nanostructure layers,  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 29(6):060601.

  37. Dasika, V, Semichaevsky, A, Petropoulos, J, Dibbern, J, Dangelewicz, A, Holub, M, Bhattacharya, P, Zide, J, Johnson, H, and Goldman, R (2011). Influence of Mn dopants on InAs/GaAs quantum dot electronic states,  APPLIED PHYSICS LETTERS, 98(14):141907.

  38. Huang, S, Semichaevsky, A, Webster, L, Johnson, H, and Goldman, R (2011). Influence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlattices,  JOURNAL OF APPLIED PHYSICS, 110(7):073105.

  39. Kumah, D, Wu, J, Husseini, N, Dasika, V, Goldman, R, Yacoby, Y, and Clarke, R (2011). Correlating structure, strain, and morphology of self-assembled InAs quantum dots on GaAs,  APPLIED PHYSICS LETTERS, 98(2):021903.

  40. Semichaevsky, A, Goldman, R, and Johnson, H (2011). Linking Computational and Experimental Studies of III-V Quantum Dots for Optoelectronics and Photovoltaics,  JOM, 63(9):20–26.

  41. Wood, A, Collino, R, Cardozo, B, Naab, F, Wang, Y, and Goldman, R (2011). Formation mechanisms of spatially-directed zincblende gallium nitride nanocrystals,  JOURNAL OF APPLIED PHYSICS, 110(12):124307.

  42. Wood, A, Weng, X, Wang, Y, and Goldman, R (2011). Formation mechanisms of embedded wurtzite and zincblende indium nitride nanocrystals,  APPLIED PHYSICS LETTERS, 99(9):093108.

  43. Dannecker, T, Jin, Y, Cheng, H, Gorman, C, Buckeridge, J, Uher, C, Fahy, S, Kurdak, C, and Goldman, R (2010). Nitrogen composition dependence of electron effective mass in GaAs1-xNx,  PHYSICAL REVIEW B, 82(12):125203.

  44. Collino, R, Dick, B, Naab, F, Wang, Y, Thouless, M, and Goldman, R (2009). Blister formation in ion-implanted GaAs: Role of diffusivity,  APPLIED PHYSICS LETTERS, 95(11):111912.

  45. Dasika, V, Goldman, R, Song, J, Choi, W, Cho, N, and Lee, J (2009). Nanometer-scale measurements of electronic states in InAs/GaAs quantum dots,  JOURNAL OF APPLIED PHYSICS, 106(1):014315.

  46. Dasika, V, Song, J, Choi, W, Cho, N, Lee, J, and Goldman, R (2009). Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formation,  APPLIED PHYSICS LETTERS, 95(16):163114.

  47. Jin, Y, He, Y, Cheng, H, Jock, R, Dannecker, T, Reason, M, Mintairov, A, Kurdak, C, Merz, J, and Goldman, R (2009). Influence of Si-N complexes on the electronic properties of GaAsN alloys,  APPLIED PHYSICS LETTERS, 95(9):092109.

  48. Jin, Y, Jock, R, Cheng, H, He, Y, Mintarov, A, Wang, Y, Kurdak, C, Merz, J, and Goldman, R (2009). Influence of N interstitials on the electronic properties of GaAsN alloys,  APPLIED PHYSICS LETTERS, 95(6):062109.

  49. Wu, J, Ye, W, Cardozo, B, Saltzman, D, Sun, K, Sun, H, Mansfield, J, and Goldman, R (2009). Formation and coarsening of Ga droplets on focused-ion-beam irradiated GaAs surfaces,  APPLIED PHYSICS LETTERS, 95(15):153107.

  50. Yadav, A, Pipe, K, Ye, W, and Goldman, R (2009). Thermoelectric properties of quantum dot chains,  JOURNAL OF APPLIED PHYSICS, 105(9):093711.

  51. Reason, M, Jin, Y, Mckay, H, Mangan, N, Mao, D, Goldman, R, Bai, X, and Kurdak, C (2008). Influence of N on the electronic properties of GaAsN alloy films and heterostructures (vol 102, art no 103710, 2007),  JOURNAL OF APPLIED PHYSICS, 103(1):019902.

  52. Sheu, Y, Lee, S, Wahlstrand, J, Walko, D, Landahl, E, Arms, D, Reason, M, Goldman, R, and Reis, D (2008). Thermal transport in a semiconductor heterostructure measured by time-resolved x-ray diffraction,  PHYSICAL REVIEW B, 78(4):045317.

  53. Trigo, M, Sheu, Y, Arms, D, Chen, J, Ghimire, S, Goldman, R, Landahl, E, Merlin, R, Peterson, E, Reason, M, and Reis, D (2008). Probing unfolded acoustic phonons with X rays,  PHYSICAL REVIEW LETTERS, 101(2):025505.

  54. Reason, M, Jin, Y, Mckay, H, Mangan, N, Mao, D, Goldman, R, Bai, X, and Kurdak, C (2007). Influence of N on the electronic properties of GaAsN alloy films and heterostructures,  JOURNAL OF APPLIED PHYSICS, 102(10):103710.

  55. Reason, M, Rudawski, N, McKay, H, Weng, X, Ye, W, and Goldman, R (2007). Mechanisms of GaAsN growth: Surface and step-edge diffusion,  JOURNAL OF APPLIED PHYSICS, 101(8):083520.

  56. Tabbal, M, Kim, T, Warrender, J, Aziz, M, Cardozo, B, and Goldman, R (2007). Formation of single crystal sulfur supersaturated silicon based junctions by pulsed laser melting,  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 25(6):1847–1852.

  57. Trigo, M, Eckhause, T, Wahlstrand, J, Merlin, R, Reason, M, and Goldman, R (2007). Ultrafast optical generation and remote detection of terahertz sound using semiconductor superlattices,  APPLIED PHYSICS LETTERS, 91(2):023115.

  58. Lu, J, Johnson, H, Dasika, V, and Goldman, R (2006). Moments-based tight-binding calculations of local electronic structure in InAs/GaAs quantum dots for comparison to experimental measurements,  APPLIED PHYSICS LETTERS, 88(5):053109.

  59. Trigo, M, Eckhause, T, Reason, M, Goldman, R, and Merlin, R (2006). Observation of surface-avoiding waves: A new class of extended states in periodic media,  PHYSICAL REVIEW LETTERS, 97(12):124301.

  60. Gleason, J, Hjelmstad, M, Dasika, V, Goldman, R, Fathpour, S, Charkrabarti, S, and Bhattacharya, P (2005). Nanometer-scale studies of point defect distributions in GaMnAs alloys,  APPLIED PHYSICS LETTERS, 86(1):011911.

  61. Lee, S, Cavalieri, A, Fritz, D, Swan, M, Hegde, R, Reason, M, Goldman, R, and Reis, D (2005). Generation and propagation of a picosecond acoustic pulse at a buried interface: Time-resolved X-ray diffraction measurements,  PHYSICAL REVIEW LETTERS, 95(24):246104.

  62. Reason, M, Weng, X, Ye, W, Dettling, D, Hanson, S, Obeidi, G, and Goldman, R (2005). Stress evolution in GaAsN alloy films,  JOURNAL OF APPLIED PHYSICS, 97(10):103523.

  63. Trigo, M, Eckhause, T, Wahlstrand, J, Merlin, R, Reason, M, and Goldman, R (2005). Generation and remote detection of coherent folded acoustic phonons,  Physics of Semiconductors, Pts A and B, 772:1190–1191.

  64. Weng, X, Rudawski, N, Wang, P, Goldman, R, Partin, D, and Heremans, J (2005). Effects of buffer layers on the structural and electronic properties of InSb films,  JOURNAL OF APPLIED PHYSICS, 97(4):043713.

  65. Weng, X, Ye, W, Clarke, S, Goldman, R, Rotberg, V, Daniel, A, and Clarke, R (2005). Matrix-seeded growth of nitride semiconductor nanostructures using ion beams,  JOURNAL OF APPLIED PHYSICS, 97(6):064301.

  66. Ye, W, Hanson, S, Reason, M, Weng, X, and Goldman, R (2005). Control of InAs/GaAs quantum dot density and alignment using modified buffer layers,  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 23(4):1736–1740.

  67. Goldman, R (2004). Nanoprobing of semiconductor heterointerfaces: quantum dots, alloys and diffusion,  JOURNAL OF PHYSICS D-APPLIED PHYSICS, 37(13):R163–R178.

  68. Reason, M, McKay, H, Ye, W, Hanson, S, Goldman, R, and Rotberg, V (2004). Mechanisms of nitrogen incorporation in GaAsN alloys,  APPLIED PHYSICS LETTERS, 85(10):1692–1694.

  69. Shin, B, Chen, W, Goldman, R, Song, J, Kim, J, and Lee, Y (2004). Initiation and evolution of phase separation in GaP/InP short-period superlattices,  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 22(1):216–219.

  70. Weng, X, Goldman, R, Rotberg, V, Bataiev, N, and Brillson, L (2004). Origins of luminescence from nitrogen-ion-implanted epitaxial GaAs,  APPLIED PHYSICS LETTERS, 85(14):2774–2776.

  71. Weng, X, Ye, W, Goldman, R, and Mabon, J (2004). Formation and blistering of GaAsN nanostructure layers,  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 22(3):989–992.

  72. Chen, W, Shin, B, Goldman, R, Stiff, A, and Bhattacharya, P (2003). Mechanisms of lateral ordering of InAs/GaAs quantum dot superlattices,  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 21(4):1920–1923.

  73. Goldman, R, Shin, B, and Lita, B (2003). Mechanisms of semiconductor nanostructure formation,  PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 195(1):151–158.

  74. Shin, B, Lin, A, Lappo, K, Goldman, R, Hanna, M, Francoeur, S, Norman, A, and Mascarenhas, A (2002). Initiation and evolution of phase separation in heteroepitaxial InAlAs films,  APPLIED PHYSICS LETTERS, 80(18):3292–3294.

  75. Shin, B, Lita, B, Goldman, R, Phillips, J, and Bhattacharya, P (2002). Lateral indium-indium pair correlations within the wetting layers of buried InAs/GaAs quantum dots,  APPLIED PHYSICS LETTERS, 81(8):1423–1425.

  76. Weng, X, Clarke, S, Ye, W, Kumar, S, Goldman, R, Daniel, A, Clarke, R, Holt, J, Sipowska, J, Francis, A, and Rotberg, V (2002). Evolution of structural and optical properties of ion-beam synthesized GaAsN nanostructures,  JOURNAL OF APPLIED PHYSICS, 92(7):4012–4018.

  77. Krishna, S, Sabarinathan, J, Linder, K, Bhattacharya, P, Lita, B, and Goldman, R (2000). Growth of high density self-organized (In,Ga)As quantum dots with ultranarrow photoluminescence linewidths using buried In(Ga,Al)As stressor dots,  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 18(3):1502–1506.

  78. Lita, B, Beck, M, Goldman, R, Seryogin, G, Nikishin, S, and Temkin, H (2000). Structural and compositional variations in ZnSnP2/GaAs superlattices,  APPLIED PHYSICS LETTERS, 77(18):2894–2896.

  79. Lita, B, Goldman, R, Phillips, J, and Bhattacharya, P (2000). Interdiffusion, segregation, and dissolution in InAs/GaAs quantum dot superlattices,  SURFACE REVIEW AND LETTERS, 7(5-6):539–545.

  80. Weng, X, Goldman, R, Partin, D, and Heremans, J (2000). Evolution of structural and electronic properties of highly mismatched InSb films,  JOURNAL OF APPLIED PHYSICS, 88(11):6276–6286.

  81. Goldman, R (1999). Papers from the 17th North American Conference on molecular beam epitaxy - Preface,  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 17(3):1115.

  82. Lita, B, Ghaisas, S, Goldman, R, and Melloch, M (1999). Nanometer-scale studies of Al-Ga interdiffusion and As precipitate coarsening in nonstoichiometric AlAs/GaAs superlattices,  APPLIED PHYSICS LETTERS, 75(26):4082–4084.

  83. Lita, B, Goldman, R, Phillips, J, and Bhattacharya, P (1999). Interdiffusion and surface segregation in stacked self-assembled InAs/GaAs quantum dots,  APPLIED PHYSICS LETTERS, 75(18):2797–2799.

  84. Lita, B, Goldman, R, Phillips, J, and Bhattacharya, P (1999). Nanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots,  APPLIED PHYSICS LETTERS, 74(19):2824–2826.

  85. Chen, H, Feenstra, R, Goldman, R, Silfvenius, C, and Landgren, G (1998). Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy,  APPLIED PHYSICS LETTERS, 72(14):1727–1729.

  86. Chen, N, Yang, R, and Goldman, R (1998). Kinetics of carbon-NO reaction studied by scanning tunneling microscopy on the basal plane of graphite,  JOURNAL OF CATALYSIS, 180(2):245–257.

  87. Goldman, R, Kavanagh, K, Wieder, H, Ehrlich, S, and Feenstra, R (1998). Effects of GaAs substrate misorientation on strain relaxation in InxGa1-xAs films and multilayers,  JOURNAL OF APPLIED PHYSICS, 83(10):5137–5149.

  88. Schuermeyer, F, Cheskis, D, Goldman, R, and Wieder, H (1998). Photoconduction studies on InGaAs HEMTs,  COMPOUND SEMICONDUCTORS 1997, 156:303–306.

  89. Goldman, R, Feenstra, R, Briner, B, OSteen, M, and Hauenstein, R (1997). Nanometer-scale studies of nitride/arsenide heterostructures produced by nitrogen plasma exposure of GaAs,  JOURNAL OF ELECTRONIC MATERIALS, 26(11):1342–1348.

  90. Goldman, R, Feenstra, R, Silfvenius, C, Stalnacke, B, and Landgren, G (1997). Morphological and compositional variations in strain-compensated InGaAsP/InGaP superlattices,  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 15(4):1027–1033.

  91. Kavanagh, K, Goldman, R, Lavoie, C, Leduc, B, Pinnington, T, Tiedje, T, Klug, D, and Tse, J (1997). In situ detection of misfit dislocations by light scattering,  JOURNAL OF CRYSTAL GROWTH, 174(1-4):550–557.

  92. Goldman, R, Feenstra, R, Briner, B, OSteen, M, and Hauenstein, R (1996). Atomic-scale structure and electronic properties of GaN/GaAs superlattices,  APPLIED PHYSICS LETTERS, 69(24):3698–3700.

  93. Goldman, R, Kavanagh, K, and Wieder, H (1996). Modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterostructures grown on GaAs substrates using step-graded InxGa1-xAs buffers,  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 14(4):3035–3039.

  94. Goldman, R, Kavanagh, K, Wieder, H, Robbins, V, Ehrlich, S, and Feenstra, R (1996). Correlation of buffer strain relaxation modes with transport properties of two-dimensional electron gases,  JOURNAL OF APPLIED PHYSICS, 80(12):6849–6854.

  95. Margulies, D, Parker, F, Spada, F, Goldman, R, Li, J, Sinclair, R, and Berkowitz, A (1996). Anomalous moment and anisotropy behavior in Fe3O4 films,  PHYSICAL REVIEW B, 53(14):9175–9187.

  96. GOLDMAN, R, CHEN, J, KAVANAGH, K, WIEDER, H, ROBBINS, V, and MILLER, J (1995). STRUCTURAL AND MAGNETOTRANSPORT PROPERTIES OF INGAAS/INALAS HETEROSTRUCTURES GROWN ON LINEARLY-GRADED AL(INGA)AS BUFFERS ON GAAS,  COMPOUND SEMICONDUCTORS 1994(141):313–318.

  97. GOLDMAN, R, WIEDER, H, and KAVANAGH, K (1995). CORRELATION OF ANISOTROPIC STRAIN RELAXATION WITH SUBSTRATE MISORIENTATION DIRECTION AT INGAAS/GAAS(001) INTERFACES,  APPLIED PHYSICS LETTERS, 67(3):344–346.

  98. Goldman, R, Wieder, H, and Kavanagh, K (1995). Effects of substrate misorientation direction on strain relaxation at InGaAs/GaAs(001) interfaces,  STRAINED LAYER EPITAXY-MATERIALS, PROCESSING, AND DEVICE APPLICATIONS, 379:21–26.

  99. Lavoie, C, Pinnington, T, Nodwell, E, Tiedje, T, Goldman, R, Kavanagh, K, and Hutter, J (1995). Relationship between surface morphology and strain relaxation during growth of InGaAs strained layers,  APPLIED PHYSICS LETTERS, 67(25):3744–3746.

  100. RAMMOHAN, K, RICH, D, GOLDMAN, R, CHEN, J, WIEDER, H, and KAVANAGH, K (1995). STUDY OF MU-M-SCALE SPATIAL VARIATIONS IN STRAIN OF A COMPOSITIONALLY STEP-GRADED INXGA1-XAS/GAAS(001) HETEROSTRUCTURE,  APPLIED PHYSICS LETTERS, 66(7):869–871.